The influence of growth duration process on morphology and electrical properties of SnO2 Nanostructured Films
Tin oxide (SnO2) nanostructured thin film with different immersion times was prepared on zinc oxide (ZnO) seeded catalyst using immersion method. The immersion times were varied at 3.0, 3.5 and 4.0 hours. Field emission scanning electron microscopy (FESEM) and two point probes current-voltage (I-V)...
| 發表在: | Solid State Phenomena |
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| 主要作者: | |
| 格式: | Conference paper |
| 語言: | English |
| 出版: |
Trans Tech Publications Ltd
2017
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| 在線閱讀: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85032709374&doi=10.4028%2fwww.scientific.net%2fSSP.268.274&partnerID=40&md5=859d183f76e1ea5de41baed69761faea |
| 總結: | Tin oxide (SnO2) nanostructured thin film with different immersion times was prepared on zinc oxide (ZnO) seeded catalyst using immersion method. The immersion times were varied at 3.0, 3.5 and 4.0 hours. Field emission scanning electron microscopy (FESEM) and two point probes current-voltage (I-V) measurements were used to study the surface morphology and electrical properties of SnO2 nanostructured thin films. The diameter size of SnO2 nanostructures which immersed at 3.0, 3.5 and 4.0 h were in range 10-20 nm, 20-30 nm and 30-50 nm, respectively. The results shows the highest electrical properties was at 3.0 h of immersion time. © 2017 Trans Tech Publications, Switzerland. |
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| ISSN: | 10120394 |
| DOI: | 10.4028/www.scientific.net/SSP.268.274 |