Class-C architecture for cross-coupled FBAR oscillator to further improve phase noise
In this letter, a class-C architecture for an oscillator employing film bulk acoustic resonator (FBAR) is presented to improve the phase noise significantly in 1/f3 region. The advantages offers by class-C operation are exploited in order to reduce the noise contributed by the current-source transis...
| Published in: | IEICE Electronics Express |
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| Main Author: | |
| Format: | Article |
| Language: | English |
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Institute of Electronics Information Communication Engineers
2017
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85015419698&doi=10.1587%2felex.14.20170056&partnerID=40&md5=644662d0e880b2e3fe7a910c5081cf9f |
| Summary: | In this letter, a class-C architecture for an oscillator employing film bulk acoustic resonator (FBAR) is presented to improve the phase noise significantly in 1/f3 region. The advantages offers by class-C operation are exploited in order to reduce the noise contributed by the current-source transistor in cross-coupled topology. An adaptive biasing circuit is used in order to ensure the oscillation start-up. The post-layout simulation incorporating all parasitic and representing FBAR by modified Butterworth Van Dyke (MBVD) model illustrates the phase noise improvement by 17 dBc/Hz at 100 kHz offset of a 1.9 GHz carrier compared to the FBAR based cross-coupled topology presented by the authors [1]. © IEICE 2017. |
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| ISSN: | 13492543 |
| DOI: | 10.1587/elex.14.20170056 |