Effect of anneal temperature on fluorine doped tin oxide (FTO) nanostructured fabricated using hydrothermal method

• Published in: AIP Conference Proceedings
• Main Author: Ahmad M.K.; Marzuki N.A.; Soon C.F.; Nafarizal N.; Sanudin R.; Suriani A.B.; Mohamed A.; Shimomura M.; Murakami K.; Mamat M.H.; Malek M.F.
• Format: Conference paper
• Language: English
• Published: American Institute of Physics Inc. 2017
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85010934329&doi=10.1063%2f1.4968297&partnerID=40&md5=9a02dfa04dc2981499d369b5a8385ea3

FTO thin films were prepared by the hydrothermal method at anneal temperature of 100°C-400°C using pentahydrate stannic chloride (SnCl4.5H2O) and ammonium fluoride (NH4F) as precursors, and a mixture of DI water, acetone and hydrochloride as a solvent. The X-ray diffraction studies confirmed the tetragonal structure with polycrystalline nature. The preferred directions of crystal growth appeared in the diffractogram of FTO thin films prepared with different anneal temperature were correspond to the reflection from the (101), (200) and (211) planes, respectively. The electrical study reveals that the films have degenerate and exhibit n-type electrical conductivity. For films prepared at 400°C, the relatively higher transmittance of about 85-90% at 800nm has been observed. The transmission attained in this study is greater than the values reported for tin oxide films prepared at anneal temperature 400°C, from an aqueous solution of SnCl4.5H2O precursor. Resistivity is smaller than the value reported. The obtained results revealed that the structures and properties of the films were greatly affected by anneal temperature. © 2016 Author(s).