Sensitivity of nanostructured Al-doped ZnO-based CH4 sensor fabricated using sol-gel method

Sensitivity of nanostructured Al-doped ZnO-based CH4 sensor fabricated using sol-gel method

The atomic force microscopy (AFM) morphologies and electrical properties of the nanostructured Aluminium (Al) doped Zinc Oxide (ZnO) thin films prepared at various thicknesses were investigated. The films were prepared by sol-gel spin-coating method to fabricate ZnO-based sensors. The sensitivity up...

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Published in:2014 2nd International Conference on Electrical, Electronics and System Engineering, ICEESE 2014
Main Author: Shafura A.K.; Sin N.D.Md.; Azhar N.E.A.; Uzer M.; Mamat M.H.; Alrokayan S.A.H.; Khan H.A.; Rusop M.
Format: Conference paper
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2014
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84988234057&doi=10.1109%2fICEESE.2014.7154614&partnerID=40&md5=83dfe66b0a0fa8ea2422f7b0b7f940d0
id 2-s2.0-84988234057
spelling 2-s2.0-84988234057
Shafura A.K.; Sin N.D.Md.; Azhar N.E.A.; Uzer M.; Mamat M.H.; Alrokayan S.A.H.; Khan H.A.; Rusop M.
Sensitivity of nanostructured Al-doped ZnO-based CH4 sensor fabricated using sol-gel method
2014
2014 2nd International Conference on Electrical, Electronics and System Engineering, ICEESE 2014


10.1109/ICEESE.2014.7154614
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84988234057&doi=10.1109%2fICEESE.2014.7154614&partnerID=40&md5=83dfe66b0a0fa8ea2422f7b0b7f940d0
The atomic force microscopy (AFM) morphologies and electrical properties of the nanostructured Aluminium (Al) doped Zinc Oxide (ZnO) thin films prepared at various thicknesses were investigated. The films were prepared by sol-gel spin-coating method to fabricate ZnO-based sensors. The sensitivity upon exposure to methane (CH4) gas at room temperature was investigated. The results show that the lowest resistivity of 0.752 × 106 Ω-cm was obtained for the ZnO nanostructures prepared at thickness of 170 nm. It also display highest sensitivity value which is 30%. © 2014 IEEE.
Institute of Electrical and Electronics Engineers Inc.

English
Conference paper
author Shafura A.K.; Sin N.D.Md.; Azhar N.E.A.; Uzer M.; Mamat M.H.; Alrokayan S.A.H.; Khan H.A.; Rusop M.
spellingShingle Shafura A.K.; Sin N.D.Md.; Azhar N.E.A.; Uzer M.; Mamat M.H.; Alrokayan S.A.H.; Khan H.A.; Rusop M.
Sensitivity of nanostructured Al-doped ZnO-based CH4 sensor fabricated using sol-gel method
author_facet Shafura A.K.; Sin N.D.Md.; Azhar N.E.A.; Uzer M.; Mamat M.H.; Alrokayan S.A.H.; Khan H.A.; Rusop M.
author_sort Shafura A.K.; Sin N.D.Md.; Azhar N.E.A.; Uzer M.; Mamat M.H.; Alrokayan S.A.H.; Khan H.A.; Rusop M.
title Sensitivity of nanostructured Al-doped ZnO-based CH4 sensor fabricated using sol-gel method
title_short Sensitivity of nanostructured Al-doped ZnO-based CH4 sensor fabricated using sol-gel method
title_full Sensitivity of nanostructured Al-doped ZnO-based CH4 sensor fabricated using sol-gel method
title_fullStr Sensitivity of nanostructured Al-doped ZnO-based CH4 sensor fabricated using sol-gel method
title_full_unstemmed Sensitivity of nanostructured Al-doped ZnO-based CH4 sensor fabricated using sol-gel method
title_sort Sensitivity of nanostructured Al-doped ZnO-based CH4 sensor fabricated using sol-gel method
publishDate 2014
container_title 2014 2nd International Conference on Electrical, Electronics and System Engineering, ICEESE 2014
container_volume
container_issue
doi_str_mv 10.1109/ICEESE.2014.7154614
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-84988234057&doi=10.1109%2fICEESE.2014.7154614&partnerID=40&md5=83dfe66b0a0fa8ea2422f7b0b7f940d0
description The atomic force microscopy (AFM) morphologies and electrical properties of the nanostructured Aluminium (Al) doped Zinc Oxide (ZnO) thin films prepared at various thicknesses were investigated. The films were prepared by sol-gel spin-coating method to fabricate ZnO-based sensors. The sensitivity upon exposure to methane (CH4) gas at room temperature was investigated. The results show that the lowest resistivity of 0.752 × 106 Ω-cm was obtained for the ZnO nanostructures prepared at thickness of 170 nm. It also display highest sensitivity value which is 30%. © 2014 IEEE.
publisher Institute of Electrical and Electronics Engineers Inc.
issn
language English
format Conference paper
accesstype
record_format scopus
collection Scopus
_version_ 1792585535190990848

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