Optical studies on the influence of annealing temperature of TiO2 seed layer to the growth of ZnO nanostructures

• Published in: 2014 2nd International Conference on Electrical, Electronics and System Engineering, ICEESE 2014
• Main Author: Asib N.A.M.; Afaah A.N.; Aadila A.; Mohamed R.; Alrokayan S.A.H.; Khan H.A.; Rusop M.; Khusaimi Z.
• Format: Conference paper
• Language: English
• Published: Institute of Electrical and Electronics Engineers Inc. 2014
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84988220714&doi=10.1109%2fICEESE.2014.7154609&partnerID=40&md5=84fb84535d2dbe26bc7de6c5129c2b07

In this present work, zinc oxide (ZnO) nanostructures were successfully grown on titanium dioxide (TiO2) seed layer. To prepare a suitable site for ZnO nanostructures to grow, the TiO2 seed layer was pre-coated on glass substrate by sol-gel spin-coating. The coated TiO2 thin films were heated at different annealing temperatures; 350, 400, 450, 500 and 550 C for 2 hours in order to determine the best optical quality of the seed layer film for growth of ZnO nanostructures by solution-immersion method. The optical properties of the TiO2: ZnO thin films, as a function of TiO2 annealing temperature have been studied by Photoluminescence (PL) spectroscopy and UV-Vis (Ultraviolet Visible) spectroscopy. Compared to as-grown TiO2 seed layer, red shift was observed on the PL emission peaks of annealed TiO2 seed layer in visible region. This is due to the presence of interstitial oxygen (Oi-). To determine the optical quality and stoichiometric properties of the films, the ratio of the UV emission peak intensity and the visible emission peak intensity, IUV/IVIS were calculated to be 0.32, 0.77, 0.88, 1.50, 1.05 and 0.36 for as-grown, 350, 400, 450, 500 and 550 C, respectively. The higher the intensity of the ratio IUV/IVIS, the better the optical quality of the thin films is. UV-Vis spectra showed that the thin films exhibited high transparency in visible region and high absorption properties in the UV region. © 2014 IEEE.