Influence of Different Sol-gel Spin Coating Speed on Memristive Behaviour of Pt/TiO2/ZnO/ITO Device

• Published in: IOP Conference Series: Materials Science and Engineering
• Main Author: Kasim S.M.M.; Shaari N.A.A.; Bakar R.A.; Aznilinda Z.; Mohamad Z.; Herman S.H.
• Format: Conference paper
• Language: English
• Published: Institute of Physics Publishing 2015
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84960873119&doi=10.1088%2f1757-899X%2f99%2f1%2f012020&partnerID=40&md5=9d05a865a0a9ebf1653ed62c985ee04f

Composite titanium dioxide (TiO2) and zinc oxide (ZnO) thin films were deposited on indium tin oxide (ITO) substrates using sol-gel spin coating technique. The electrical and physical characterizations of three different sol-gel spin coating speed were investigated using two-probe current-voltage (I-V) measurement, field emission scanning electron microscopy (FESEM) and surface profiler (SP) respectively. The I-V measurement results showed the pinched hysteresis loop for every single of devices thus indicate that all the devices are memristive. ROFF/RON ratio which was defined from the hysteresis loop of device with higher spin speed was slightly higher compared to others. © Published under licence by IOP Publishing Ltd.