Preparation of aligned ZnO nanorod arrays on Sn-Doped ZnO thin films by sonicated sol-gel immersion fabricated for dye-sensitized solar cell

• Published in: Advances in Materials Science and Engineering
• Main Author: Saurdi I.; Mamat M.H.; Malek M.F.; Rusop M.
• Format: Article
• Language: English
• Published: Hindawi Publishing Corporation 2014
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84934955091&doi=10.1155%2f2014%2f636725&partnerID=40&md5=5924ffc9438a20f3a5769e4148574783

Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (20 nm), high average transmittance (96%) in visible region, and good resistivity 7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films. © 2014 I. Saurdi et al.