Boron doped amorphous carbon on n-type silicon with low negative bias by using palm oil precursor
Boron doped heterojunction of amorphous carbon solar cell were successfully fabricated using palm oil precursor in the environment of low negative bias. The open circuit voltage (Voc), current density (JSC), fill factor (FF) and efficiency (%) of boron doped without the use of negative bias (a-C/n-S...
| Published in: | ISTMET 2014 - 1st International Symposium on Technology Management and Emerging Technologies, Proceedings |
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| Main Author: | |
| Format: | Conference paper |
| Language: | English |
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Institute of Electrical and Electronics Engineers Inc.
2014
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84912139742&doi=10.1109%2fISTMET.2014.6936502&partnerID=40&md5=d9866db29a3d7d9e414f842ecd2be376 |
| Summary: | Boron doped heterojunction of amorphous carbon solar cell were successfully fabricated using palm oil precursor in the environment of low negative bias. The open circuit voltage (Voc), current density (JSC), fill factor (FF) and efficiency (%) of boron doped without the use of negative bias (a-C/n-Si) were approximately 0.128244, 0.452821mA/cm2, 0.255398, and 0.014831%, respectively. Meanwhile, the optimize of open circuit voltage (VOC), current density (JSC), fill factor and efficiency of a-C:B/n-Si fabricated by low negative bias were 0.265508V, 5.602622mA/cm2, 0.220737, and 0.328355%, respectively. The conversion efficiency of a-C:B has been improved under the influenced of low negative bias. © 2014 IEEE. |
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| ISSN: | |
| DOI: | 10.1109/ISTMET.2014.6936502 |