Thermal annealing-induced formation of ZnO nanoparticles: Minimum strain and stress ameliorate preferred c-axis orientation and crystal-growth properties

Nanocrystalline zinc oxide (ZnO) thin films have been deposited on glass substrates using a sonicated sol-gel dip-coating technique at various thermal annealing (Ta) temperatures. The Ta temperature was varied to range from 300 to 600 °C in intervals of 50 °C in an open atmosphere. To obtain desirab...

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Published in:Journal of Alloys and Compounds
Main Author: Malek M.F.; Mamat M.H.; Musa M.Z.; Khusaimi Z.; Sahdan M.Z.; Suriani A.B.; Ishak A.; Saurdi I.; Rahman S.A.; Rusop M.
Format: Article
Language:English
Published: Elsevier Ltd 2014
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84901989652&doi=10.1016%2fj.jallcom.2014.05.036&partnerID=40&md5=95e45a4798328fe7ca728a342cd0bcc7
id 2-s2.0-84901989652
spelling 2-s2.0-84901989652
Malek M.F.; Mamat M.H.; Musa M.Z.; Khusaimi Z.; Sahdan M.Z.; Suriani A.B.; Ishak A.; Saurdi I.; Rahman S.A.; Rusop M.
Thermal annealing-induced formation of ZnO nanoparticles: Minimum strain and stress ameliorate preferred c-axis orientation and crystal-growth properties
2014
Journal of Alloys and Compounds
610

10.1016/j.jallcom.2014.05.036
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84901989652&doi=10.1016%2fj.jallcom.2014.05.036&partnerID=40&md5=95e45a4798328fe7ca728a342cd0bcc7
Nanocrystalline zinc oxide (ZnO) thin films have been deposited on glass substrates using a sonicated sol-gel dip-coating technique at various thermal annealing (Ta) temperatures. The Ta temperature was varied to range from 300 to 600 °C in intervals of 50 °C in an open atmosphere. To obtain desirable piezoelectric properties, the correlations between Ta and the characteristics of ZnO thin films (crystallisation, optical and electrical behaviour) were investigated. The as-deposited films have large compressive stresses of 0.49 GPa, which relaxed to 0.27 GPa as the Ta temperature increased to 500 °C. Optical parameters, such as optical transmittance, absorption coefficient and energy band gap, have been studied and discussed with respect to Ta. All films exhibit a transmittance above 50% in the visible region. It was found that the compressive stresses in the films cause a decrease in the optical band gap, whereas the tensile stress reveals an incline pattern with the optical band gap. This result corroborated with the crystallinity along the c-axis plane. The highest crystallinity value was achieved at the lowest stress value. An identical trend was observed for the resistivity values from the I-V measurement. Moreover, an increase in the crystallite size from 10 to 39 nm as the level of Ta increased was noticed. The thickness of the films also decreased when Ta increased, and denser films were obtained as a result. A qualified ZnO thin film with good piezoelectric properties has been prepared using a sonicated sol-gel dip-coating technique with various T a. Experimental results show that Ta has the greatest influence on the final properties of the ZnO thin films. © 2014 Elsevier B.V. All rights reserved.
Elsevier Ltd
9258388
English
Article

author Malek M.F.; Mamat M.H.; Musa M.Z.; Khusaimi Z.; Sahdan M.Z.; Suriani A.B.; Ishak A.; Saurdi I.; Rahman S.A.; Rusop M.
spellingShingle Malek M.F.; Mamat M.H.; Musa M.Z.; Khusaimi Z.; Sahdan M.Z.; Suriani A.B.; Ishak A.; Saurdi I.; Rahman S.A.; Rusop M.
Thermal annealing-induced formation of ZnO nanoparticles: Minimum strain and stress ameliorate preferred c-axis orientation and crystal-growth properties
author_facet Malek M.F.; Mamat M.H.; Musa M.Z.; Khusaimi Z.; Sahdan M.Z.; Suriani A.B.; Ishak A.; Saurdi I.; Rahman S.A.; Rusop M.
author_sort Malek M.F.; Mamat M.H.; Musa M.Z.; Khusaimi Z.; Sahdan M.Z.; Suriani A.B.; Ishak A.; Saurdi I.; Rahman S.A.; Rusop M.
title Thermal annealing-induced formation of ZnO nanoparticles: Minimum strain and stress ameliorate preferred c-axis orientation and crystal-growth properties
title_short Thermal annealing-induced formation of ZnO nanoparticles: Minimum strain and stress ameliorate preferred c-axis orientation and crystal-growth properties
title_full Thermal annealing-induced formation of ZnO nanoparticles: Minimum strain and stress ameliorate preferred c-axis orientation and crystal-growth properties
title_fullStr Thermal annealing-induced formation of ZnO nanoparticles: Minimum strain and stress ameliorate preferred c-axis orientation and crystal-growth properties
title_full_unstemmed Thermal annealing-induced formation of ZnO nanoparticles: Minimum strain and stress ameliorate preferred c-axis orientation and crystal-growth properties
title_sort Thermal annealing-induced formation of ZnO nanoparticles: Minimum strain and stress ameliorate preferred c-axis orientation and crystal-growth properties
publishDate 2014
container_title Journal of Alloys and Compounds
container_volume 610
container_issue
doi_str_mv 10.1016/j.jallcom.2014.05.036
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-84901989652&doi=10.1016%2fj.jallcom.2014.05.036&partnerID=40&md5=95e45a4798328fe7ca728a342cd0bcc7
description Nanocrystalline zinc oxide (ZnO) thin films have been deposited on glass substrates using a sonicated sol-gel dip-coating technique at various thermal annealing (Ta) temperatures. The Ta temperature was varied to range from 300 to 600 °C in intervals of 50 °C in an open atmosphere. To obtain desirable piezoelectric properties, the correlations between Ta and the characteristics of ZnO thin films (crystallisation, optical and electrical behaviour) were investigated. The as-deposited films have large compressive stresses of 0.49 GPa, which relaxed to 0.27 GPa as the Ta temperature increased to 500 °C. Optical parameters, such as optical transmittance, absorption coefficient and energy band gap, have been studied and discussed with respect to Ta. All films exhibit a transmittance above 50% in the visible region. It was found that the compressive stresses in the films cause a decrease in the optical band gap, whereas the tensile stress reveals an incline pattern with the optical band gap. This result corroborated with the crystallinity along the c-axis plane. The highest crystallinity value was achieved at the lowest stress value. An identical trend was observed for the resistivity values from the I-V measurement. Moreover, an increase in the crystallite size from 10 to 39 nm as the level of Ta increased was noticed. The thickness of the films also decreased when Ta increased, and denser films were obtained as a result. A qualified ZnO thin film with good piezoelectric properties has been prepared using a sonicated sol-gel dip-coating technique with various T a. Experimental results show that Ta has the greatest influence on the final properties of the ZnO thin films. © 2014 Elsevier B.V. All rights reserved.
publisher Elsevier Ltd
issn 9258388
language English
format Article
accesstype
record_format scopus
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