| Summary: | Photoluminescence of silicon quantum dots nanoparticles (SQDNs) embedded on glass surface was measured by using Photoluminescence Spectroscopy (PL) at room temperature with a laser source of 512.32 nm. SQDNs were prepared by using electrochemical etching process, used p-type silicon (Si) wafer. The Si wafer was etched at constant time using a current density 20 mAcm-2 for 20 min and continuously with 30 min until the wafer surface became flakes. These flakes were grinded to be SQDNs and thus produced were embedded on glass surface, by using different ratio of dionize water (DI) and hydrofluoric acid (HF). This different ratio of DI:HF will be defect the glass surface. Photoluminescence result showed the higher when SQDNs were embedded on glass surface with DI:HF 1:5, the second higher was 1:8 ant the less was 1:2. In this paper, size for SQDNs were constant with size 1.4 nm by using Sherrer equation from X-ray Diffaraction (XRD) result. © 2013 The Authors. Published by Elsevier Ltd.
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