Effect of TiO2 seed layer thickness to the growth of TiO2 nanostructures by immersion method for memristive device application

• Published in: Applied Mechanics and Materials
• Main Author: Kamarozaman N.S.; Asiah M.N.; Aznilinda Z.; Bakar R.A.; Herman S.H.; Rusop M.
• Format: Conference paper
• Language: English
• Published: 2013
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84886283444&doi=10.4028%2fwww.scientific.net%2fAMM.393.63&partnerID=40&md5=e7071705a9409a469d7781876954657f

TiO2 nanostructures were successfully grown on TiO2 thin film by solution-based method at low temperature. TiO2 thin film as a seed layer for the nanostructures growth was deposited on ITO substrate by RF magnetron sputtering method at 40 and 60 nm thicknesses. Then the TiO2 nanostructures were synthesized on the samples by keeping them floating with TiO2 layer facing down the vessel in 10M NaOH solution at 80°C for 45 min. Effect of seed layer thickness to the growth of TiO2 nanostructure and its memristive behaviour were investigated. Surface morphology and current-voltage measurement for its memristive behaviour were measured by FESEM image and Keithley 4200 semiconductor characterization system. It was found that 60 nm-TiO2 thin film result in the formation of dandelion-like morphology of TiO2 nanowires and gives better memristive behavior with larger switching loops when positive voltage was applied to the sample. © (2013) Trans Tech Publications, Switzerland.