Influence of post annealing temperature on the properties of ZnO films prepared by RF magnetron sputtering
Zinc Oxide (ZnO) films were prepared on unheated glass substrate by radio frequency (RF) magnetron sputtering technique and post deposition annealing of the ZnO thin film were performed at 350, 400, 450 and 500°C. Post annealing temperature was found to improve the structural and electrical characte...
Published in: | Advanced Materials Research |
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Main Author: | |
Format: | Conference paper |
Language: | English |
Published: |
2012
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Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84869786776&doi=10.4028%2fwww.scientific.net%2fAMR.576.602&partnerID=40&md5=6ad90b5e59c53fc326276307debfe9ee |