Effect of RF power on the formation and morphology evolution of ZnO nanostructured thin films

• Published in: Advanced Materials Research
• Main Author: Md Sin N.D.; Mamat M.H.; Musa M.Z.; Ahmad S.; Abdul Aziz A.; Rusop M.
• Format: Conference paper
• Language: English
• Published: 2012
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84869480052&doi=10.4028%2fwww.scientific.net%2fAMR.576.577&partnerID=40&md5=a1076978ea11488c9e9dd5f16ce2c6da

The effect of RF power on the formation and morphology evolution of ZnO nanostructured thin films deposited by magnetron sputtering are presented. This project focused on electrical, optical and structural properties of ZnO thin films. The effect of variation of RF power at 50 watt-250 watt at 200 °C on glass substrate of the ZnO thin films was investigated. The thin films were examined for electrical properties and optical properties using two point probe currentvoltage (I-V) measurement (Keithley 2400) and UV-Vis-NIR spectrophotometer (JASCO 670) respectively. The structural properties were characterized using field emission scanning electron microscope (FESEM) (JEOL JSM 7600F) and atomic force microscope (AFM) (Park System XE- 100). The IV measurement indicated that at RF power 200 watt the conductivity of ZnO thin film show the highest. All films show high UV absorption properties using UV-VIS spectrophotometer (JASCO 670). The root means square (rms) roughness for ZnO thin film were about 4 nm measured using AFM. The image form FESEM observed that transformation of structure size started to change as the RF power increase. © (2012) Trans Tech Publications, Switzerland.