The properties of sprayed nanostructured P-Type CuI films for dye-sensitized solar cells application

In our experiments, we provide a new approach for depositing CuI (inorganic compound) thin films using the mister atomizer technique. The CuI solution was sprayed into fine droplets using argon as a carrier gas at different solution concentrations. The solution sprayed was 50 ml for all samples with...

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Published in:Journal of Nanomaterials
Main Author: Amalina M.N.; Rasheid N.A.; Rusop M.
Format: Article
Language:English
Published: 2012
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84866176023&doi=10.1155%2f2012%2f637637&partnerID=40&md5=2402db07f4d83d6549958116bb2e01d3
id 2-s2.0-84866176023
spelling 2-s2.0-84866176023
Amalina M.N.; Rasheid N.A.; Rusop M.
The properties of sprayed nanostructured P-Type CuI films for dye-sensitized solar cells application
2012
Journal of Nanomaterials
2012

10.1155/2012/637637
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84866176023&doi=10.1155%2f2012%2f637637&partnerID=40&md5=2402db07f4d83d6549958116bb2e01d3
In our experiments, we provide a new approach for depositing CuI (inorganic compound) thin films using the mister atomizer technique. The CuI solution was sprayed into fine droplets using argon as a carrier gas at different solution concentrations. The solution sprayed was 50 ml for all samples with substrate temperature constant at 50°C during the deposition process. The result shows that the CuI thin film properties strongly depend on its precursor concentration. The structural properties were characterized by XRD with strong (111) orientation shows for all the CuI thin films. FESEM images revealed that all the CuI thin films deposited were uniform with the existence of nanostructured CuI particle. The EDX measurement confirms the existence of Cu:I in the films. The nanostructured CuI will improve the penetration of p-type between the mesoporous matrix of TiO 2 thin film. Promising conductivity value of about 10° S cm -1 was obtained for CuI thin films deposited by this new deposition method. Low transmittance of below 50 was observed for all CuI thin films. The band gap energy obtained here was between 2.82 eV and 2.92 eV which is much smaller than the reported band gap which is 3.1 eV. © 2012 M. N. Amalina et al.

16874129
English
Article
All Open Access; Hybrid Gold Open Access
author Amalina M.N.; Rasheid N.A.; Rusop M.
spellingShingle Amalina M.N.; Rasheid N.A.; Rusop M.
The properties of sprayed nanostructured P-Type CuI films for dye-sensitized solar cells application
author_facet Amalina M.N.; Rasheid N.A.; Rusop M.
author_sort Amalina M.N.; Rasheid N.A.; Rusop M.
title The properties of sprayed nanostructured P-Type CuI films for dye-sensitized solar cells application
title_short The properties of sprayed nanostructured P-Type CuI films for dye-sensitized solar cells application
title_full The properties of sprayed nanostructured P-Type CuI films for dye-sensitized solar cells application
title_fullStr The properties of sprayed nanostructured P-Type CuI films for dye-sensitized solar cells application
title_full_unstemmed The properties of sprayed nanostructured P-Type CuI films for dye-sensitized solar cells application
title_sort The properties of sprayed nanostructured P-Type CuI films for dye-sensitized solar cells application
publishDate 2012
container_title Journal of Nanomaterials
container_volume 2012
container_issue
doi_str_mv 10.1155/2012/637637
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-84866176023&doi=10.1155%2f2012%2f637637&partnerID=40&md5=2402db07f4d83d6549958116bb2e01d3
description In our experiments, we provide a new approach for depositing CuI (inorganic compound) thin films using the mister atomizer technique. The CuI solution was sprayed into fine droplets using argon as a carrier gas at different solution concentrations. The solution sprayed was 50 ml for all samples with substrate temperature constant at 50°C during the deposition process. The result shows that the CuI thin film properties strongly depend on its precursor concentration. The structural properties were characterized by XRD with strong (111) orientation shows for all the CuI thin films. FESEM images revealed that all the CuI thin films deposited were uniform with the existence of nanostructured CuI particle. The EDX measurement confirms the existence of Cu:I in the films. The nanostructured CuI will improve the penetration of p-type between the mesoporous matrix of TiO 2 thin film. Promising conductivity value of about 10° S cm -1 was obtained for CuI thin films deposited by this new deposition method. Low transmittance of below 50 was observed for all CuI thin films. The band gap energy obtained here was between 2.82 eV and 2.92 eV which is much smaller than the reported band gap which is 3.1 eV. © 2012 M. N. Amalina et al.
publisher
issn 16874129
language English
format Article
accesstype All Open Access; Hybrid Gold Open Access
record_format scopus
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