Enhanced properties of porous GaN prepared by UV assisted electrochemical etching

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Enhanced properties of porous GaN prepared by UV assisted electrochemical etching

The structural and optical properties of porous GaN films on sapphire (0001) prepared by UV assisted electrochemical etching were reported in this study. SEM micrographs indicated that the shapes of the pores for both porous samples are nearly hexagonal. As compared to the as-grown GaN films, porous...

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Bibliographic Details
Published in:	Advanced Materials Research
Main Author:	Ainorkhilah M.; Naser M.A.; Hassan Z.; Kwong Y.F.; Bakhori S.K.M.; Yusof Y.; Siang C.L.
Format:	Conference paper
Language:	English
Published:	2012
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-81855177306&doi=10.4028%2fwww.scientific.net%2fAMR.364.90&partnerID=40&md5=83bd4fd0b4ade062560df3b7c94f9a80

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