Effects of cobalt doping concentration on the structural, electrical, and optical properties of titanium dioxide thin films

• Published in: International Conference on Electronic Devices, Systems, and Applications
• Main Author: Musa M.Z.; Ameran Z.F.; Mamat M.H.; Malek M.F.; Rasheid N.A.; Noor U.M.; Rusop M.
• Format: Conference paper
• Language: English
• Published: 2011
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-80055078113&doi=10.1109%2fICEDSA.2011.5959098&partnerID=40&md5=1842acaf69f6a3d2a5f5709bc0e86b87
• ISSN: 21592055
• DOI: 10.1109/ICEDSA.2011.5959098

Cobalt-doped titanium dioxide thin films have been successfully deposited using sol-gel spin coating technique. The doping process has been done by mixing cobalt source into TiO2 sol-gel. The doping concentration has been varied and its effects to the structural, electrical, and optical properties of the thin films have been studied. Reduction in electrical resistivity is observed with the increase of cobalt doping concentration. Higher cobalt doping concentration sample also shows a shift of absorption edge to longer wavelength which is a desired characteristic for application in optoelectronic devices. © 2011 IEEE.