Photoresponse characteristics of nanostructured aluminum doped Zinc oxide thin films

• Published in: International Conference on Electronic Devices, Systems, and Applications
• Main Author: Malek M.F.; Arbain S.A.; Mamat M.H.; Sahdan M.Z.; Musa M.Z.; Khusaimi Z.; Rusop M.; Rodzi A.S.
• Format: Conference paper
• Language: English
• Published: 2011
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-80055069501&doi=10.1109%2fICEDSA.2011.5959097&partnerID=40&md5=11e89d0947603606ea25e014ff833d84
• ISSN: 21592055
• DOI: 10.1109/ICEDSA.2011.5959097

Aluminium doped Zinc oxide (ZnO) thin films were prepared through sol gel dip coating technique with various doping concentrations from 0 to 1.5 at.%. The thin films were characterized using X-ray Diffractometer (XRD), Field Emission Scanning Electron Microscope (FESEM), UV-Vis-NIR spectrophotometer and current voltage (I-V) measurement system. From the XRD analysis, increasing of doping concentration affected structural properties of the thin film where c-axis orientation becomes weaker. FESEM shows a homogenous thin films in nanoscale while the UV-Vis-NIR spectra reveals all films exhibit high transmission (<80 %) in UV-NIR region. Improvement in electrical properties with dopant concentrations is observed as shown by I-V measurement results. The lowest dark resistivity obtained was 1.44 .Ωcm, while the lowest resistivity under light illumination was 1.05 Ω.cm at 1 at.% of Al doping. © 2011 IEEE.