Effects of different precursor's concentration on the properties of zinc oxide thin films
Zinc oxide (ZnO) thin films were successfully grown on silicon substrate with different molarities, by a sol-gel method. In the process, the molarities were varied from 0.2-1.0 M and it was found that increasing in molarities had affected the structure of ZnO thin films. The properties of the thin f...
| Published in: | AIP Conference Proceedings |
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| Main Author: | |
| Format: | Conference paper |
| Language: | English |
| Published: |
2010
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-78650144799&doi=10.1063%2f1.3469700&partnerID=40&md5=62bb1b179d590826dc805127e0f2e801 |
| Summary: | Zinc oxide (ZnO) thin films were successfully grown on silicon substrate with different molarities, by a sol-gel method. In the process, the molarities were varied from 0.2-1.0 M and it was found that increasing in molarities had affected the structure of ZnO thin films. The properties of the thin films were characterized and studied by ultraviolet-visible spectroscopy (UV-Vis) and photoluminescence spectrometer (PL). It was found that the molarities affect the optical properties of the resultant ZnO thin films. © 2010 American Institute of Physics. |
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| ISSN: | 15517616 |
| DOI: | 10.1063/1.3469700 |