Hydrogenated amorphous carbon based solar cells by pulsed laser deposition with mixture of graphite and camphor as precursor materials
The authors have deposited hydrogenated amorphous carbon films (a-C:H) on quartz and ρ type silicon substrates (100) by pulsed laser deposition (PLD) using a mixture of graphite and camphor powders at room temperature. The presence of hydrogen in the a-C:H films has been revealed by fourier transfor...
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2007
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2-s2.0-35348982823 Rusop M.; Tian X.M.; Soga T.; Jimbo T.; Umeno M.; Sharon M. Hydrogenated amorphous carbon based solar cells by pulsed laser deposition with mixture of graphite and camphor as precursor materials 2007 Surface Engineering 23 3 10.1179/174329406X122982 https://www.scopus.com/inward/record.uri?eid=2-s2.0-35348982823&doi=10.1179%2f174329406X122982&partnerID=40&md5=a94adfec29deb43bf9d64a7098e2069e The authors have deposited hydrogenated amorphous carbon films (a-C:H) on quartz and ρ type silicon substrates (100) by pulsed laser deposition (PLD) using a mixture of graphite and camphor powders at room temperature. The presence of hydrogen in the a-C:H films has been revealed by fourier transform Infrared spectroscopy (FTIR) measurement. The solar cell structure of a-C:H/p-Si was also fabricated. The formation of a heterojunction between the a-C:H films and silicon substrate was confirmed by the current-voltage (I-V) measurement in the dark and under illumination conditions. The structure of a-C:H/p-Si showed photovoltaic characteristics with an open circuit voltage Voc of 400 mV and short circuit current density Jsc of ∼15 mA cm -2 under illumination [air mass (AM) 1.5, 100 mW cm-2, 25°C]. From the calculation, the energy conversion efficiency and fill factor were found to be approximately 2.1% and 0.38 respectively. The carbon layer Is contributed to the energy conversion efficiency, which was proved by the measurement of quantum efficiency. © 2007 Institute of Materials, Minerals and Mining. 2670844 English Article |
author |
Rusop M.; Tian X.M.; Soga T.; Jimbo T.; Umeno M.; Sharon M. |
spellingShingle |
Rusop M.; Tian X.M.; Soga T.; Jimbo T.; Umeno M.; Sharon M. Hydrogenated amorphous carbon based solar cells by pulsed laser deposition with mixture of graphite and camphor as precursor materials |
author_facet |
Rusop M.; Tian X.M.; Soga T.; Jimbo T.; Umeno M.; Sharon M. |
author_sort |
Rusop M.; Tian X.M.; Soga T.; Jimbo T.; Umeno M.; Sharon M. |
title |
Hydrogenated amorphous carbon based solar cells by pulsed laser deposition with mixture of graphite and camphor as precursor materials |
title_short |
Hydrogenated amorphous carbon based solar cells by pulsed laser deposition with mixture of graphite and camphor as precursor materials |
title_full |
Hydrogenated amorphous carbon based solar cells by pulsed laser deposition with mixture of graphite and camphor as precursor materials |
title_fullStr |
Hydrogenated amorphous carbon based solar cells by pulsed laser deposition with mixture of graphite and camphor as precursor materials |
title_full_unstemmed |
Hydrogenated amorphous carbon based solar cells by pulsed laser deposition with mixture of graphite and camphor as precursor materials |
title_sort |
Hydrogenated amorphous carbon based solar cells by pulsed laser deposition with mixture of graphite and camphor as precursor materials |
publishDate |
2007 |
container_title |
Surface Engineering |
container_volume |
23 |
container_issue |
3 |
doi_str_mv |
10.1179/174329406X122982 |
url |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-35348982823&doi=10.1179%2f174329406X122982&partnerID=40&md5=a94adfec29deb43bf9d64a7098e2069e |
description |
The authors have deposited hydrogenated amorphous carbon films (a-C:H) on quartz and ρ type silicon substrates (100) by pulsed laser deposition (PLD) using a mixture of graphite and camphor powders at room temperature. The presence of hydrogen in the a-C:H films has been revealed by fourier transform Infrared spectroscopy (FTIR) measurement. The solar cell structure of a-C:H/p-Si was also fabricated. The formation of a heterojunction between the a-C:H films and silicon substrate was confirmed by the current-voltage (I-V) measurement in the dark and under illumination conditions. The structure of a-C:H/p-Si showed photovoltaic characteristics with an open circuit voltage Voc of 400 mV and short circuit current density Jsc of ∼15 mA cm -2 under illumination [air mass (AM) 1.5, 100 mW cm-2, 25°C]. From the calculation, the energy conversion efficiency and fill factor were found to be approximately 2.1% and 0.38 respectively. The carbon layer Is contributed to the energy conversion efficiency, which was proved by the measurement of quantum efficiency. © 2007 Institute of Materials, Minerals and Mining. |
publisher |
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issn |
2670844 |
language |
English |
format |
Article |
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record_format |
scopus |
collection |
Scopus |
_version_ |
1809677613551058944 |