| Summary: | The authors have deposited hydrogenated amorphous carbon films (a-C:H) on quartz and ρ type silicon substrates (100) by pulsed laser deposition (PLD) using a mixture of graphite and camphor powders at room temperature. The presence of hydrogen in the a-C:H films has been revealed by fourier transform Infrared spectroscopy (FTIR) measurement. The solar cell structure of a-C:H/p-Si was also fabricated. The formation of a heterojunction between the a-C:H films and silicon substrate was confirmed by the current-voltage (I-V) measurement in the dark and under illumination conditions. The structure of a-C:H/p-Si showed photovoltaic characteristics with an open circuit voltage Voc of 400 mV and short circuit current density Jsc of ∼15 mA cm -2 under illumination [air mass (AM) 1.5, 100 mW cm-2, 25°C]. From the calculation, the energy conversion efficiency and fill factor were found to be approximately 2.1% and 0.38 respectively. The carbon layer Is contributed to the energy conversion efficiency, which was proved by the measurement of quantum efficiency. © 2007 Institute of Materials, Minerals and Mining.
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