Structural properties of pulsed laser deposited zinc oxide thin films annealed at various temperatures
Zinc oxide (ZnO) thin films were prepared by pulsed laser deposition (PLD) technique using XeCl excimer laser with a wavelength of 308 nm at room temperature on quartz and single crystal silicon (100) substrates. The oxygen gas pressure was set at 6 torr during the deposition. The deposited films we...
出版年: | Surface Engineering |
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第一著者: | |
フォーマット: | 論文 |
言語: | English |
出版事項: |
2007
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オンライン・アクセス: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-35348931006&doi=10.1179%2f174329406X122964&partnerID=40&md5=9f4ee022ad057d7556ed7b6e4673cce3 |