Structural properties of pulsed laser deposited zinc oxide thin films annealed at various temperatures

Zinc oxide (ZnO) thin films were prepared by pulsed laser deposition (PLD) technique using XeCl excimer laser with a wavelength of 308 nm at room temperature on quartz and single crystal silicon (100) substrates. The oxygen gas pressure was set at 6 torr during the deposition. The deposited films we...

詳細記述

書誌詳細
出版年:Surface Engineering
第一著者: Rusop M.; Uma K.; Soga T.; Jimbo T.
フォーマット: 論文
言語:English
出版事項: 2007
オンライン・アクセス:https://www.scopus.com/inward/record.uri?eid=2-s2.0-35348931006&doi=10.1179%2f174329406X122964&partnerID=40&md5=9f4ee022ad057d7556ed7b6e4673cce3